丝印：LMG3526R030；Package：VQFN(RQS)；LMG352xR030 650V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5V to 18V supply • Robust

文件：3.23868 Mbytes 页数：59 Pages

TI

德州仪器

丝印：LMG3526R030；Package：VQFN；LMG3526R030 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 2-MHz switching frequency – 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply •

文件：3.05963 Mbytes 页数：48 Pages

TI

德州仪器

丝印：LMG3526R030；Package：VQFN(RQS)；LMG352xR030 650V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5V to 18V supply • Robust

文件：3.23868 Mbytes 页数：59 Pages

TI

德州仪器

丝印：LMG3526R030；Package：VQFN(RQS)；LMG352xR030 650V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5V to 18V supply • Robust

文件：3.23868 Mbytes 页数：59 Pages

TI

德州仪器

丝印：LMG3526R030；LMG3526R030 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 2-MHz switching frequency – 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply •

文件：3.05963 Mbytes 页数：48 Pages

TI

德州仪器

丝印：LMG3526R030；Package：VQFN(RQS)；LMG352xR030 650V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5V to 18V supply • Robust

文件：3.23868 Mbytes 页数：59 Pages

TI

德州仪器

丝印：LMG3526R030；Package：VQFN；LMG3526R030 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 2-MHz switching frequency – 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply •

文件：3.05963 Mbytes 页数：48 Pages

TI

德州仪器

丝印：LMG3526R030；Package：VQFN(RQS)；LMG352xR030 650V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5V to 18V supply • Robust

文件：3.23868 Mbytes 页数：59 Pages

TI

德州仪器

丝印：LMG3526R030；Package：VQFN(RQS)；LMG352xR030 650V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5V to 18V supply • Robust

文件：3.23868 Mbytes 页数：59 Pages

TI

德州仪器

丝印：LMG3526R030；LMG3526R030 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 2-MHz switching frequency – 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply •

文件：3.05963 Mbytes 页数：48 Pages

TI

德州仪器