LMG3422R050RQZT集成电路（IC）的全半桥驱动器规格书PDF中文资料

LMG3422R050RQZT属于集成电路（IC）的全半桥驱动器。由德州仪器制造生产的LMG3422R050RQZT全半桥驱动器器件属于电桥驱动器电源管理集成电路 (PMIC) 系列，包含两个或多个功率晶体管，以及在外部器件控制下将其用作开关所需的电路。这些晶体管通常在内部配置为成对串联连接（称为半桥），因而任意指定晶体管对之间的结点都可以连接至两个电源轨中的任一个。这类器件常用于将控制器件（如微控制器）提供的低电平信号转换为操作执行器（如步进电机或无刷电机）所需的较大功率信号。

1 Features

• Qualified for JEDEC JEP180 for hard-switching

topologies

• 600V GaN-on-Si FET with integrated gate driver

– Integrated high precision gate bias voltage

– 200V/ns FET hold-off

– 3.6MHz switching frequency

– 20V/ns to 150V/ns slew rate for optimization of

switching performance and EMI mitigation

– Operates from 7.5V to 18V supply

• Robust protection

– Cycle-by-cycle overcurrent and latched shortcircuit

protection with < 100ns response

– Withstands 720V surge while hard-switching

– Self-protection from internal overtemperature

and UVLO monitoring

• Advanced power management

– Digital temperature PWM output

– LMG3426R050 includes zero-voltage detection

(ZVD) feature that facilitates soft-switching

converters

2 Applications

• Switch-mode power converters

• Merchant network and server PSU

• Merchant telecom rectifiers

• Solar inverters and industrial motor drives

• Uninterruptible power supplies

3 Description

The LMG342xR050 GaN FET with integrated driver

and protection is targeted at switch-mode power

converters and enables designers to achieve new

levels of power density and efficiency.

The LMG342xR050 integrates a silicon driver that

enables switching speed up to 150V/ns. TI’s

integrated precision gate bias results in higher

switching SOA compared to discrete silicon gate

drivers. This integration, combined with TI's lowinductance

package, delivers clean switching and

minimal ringing in hard-switching power supply

topologies. Adjustable gate drive strength allows

control of the slew rate from 20V/ns to 150V/ns,

which can be used to actively control EMI and

optimize switching performance. The LMG3426R050

includes the zero-voltage detection (ZVD) feature

which provides a pulse output from the ZVD pin when

zero-voltage switching is realized.

Advanced power management features include

digital temperature reporting and fault detection.

The temperature of the GaN FET is reported

through a variable duty cycle PWM output, which

simplifies managing device loading. Faults reported

include overcurrent, short-circuit, overtemperature,

VDD UVLO, and high-impedance RDRV pin.