丝印：LMG2640NNNNC；Package：VQFN；LMG2640 Integrated 650V GaN Half Bridge

1 Features • 650V GaN power-FET half bridge • 105mΩ low-side and high-side GaN FETs • Integrated gate drivers with low propagation delays • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive interlock • High-side gate-drive signal level shifter

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