丝印：LMG3410R150；Package：VQFN；LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

文件：1.01758 Mbytes 页数：35 Pages

TI

德州仪器

丝印：LMG3410R150；Package：VQFN；LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

文件：1.01758 Mbytes 页数：35 Pages

TI

德州仪器

丝印：LMG3410R150；Package：VQFN；LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

文件：1.01758 Mbytes 页数：35 Pages

TI

德州仪器

丝印：LMG3410R150；Package：VQFN；LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

文件：1.01758 Mbytes 页数：35 Pages

TI

德州仪器

丝印：LMG3410R150；Package：VQFN；LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

文件：1.01758 Mbytes 页数：35 Pages

TI

德州仪器

丝印：LMG3410R150；Package：VQFN；LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

文件：1.01758 Mbytes 页数：35 Pages

TI

德州仪器

丝印：LMG3410R150；Package：VQFN；LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

文件：1.01758 Mbytes 页数：35 Pages

TI

德州仪器

丝印：LMG3410R150；Package：VQFN；LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

文件：1.01758 Mbytes 页数：35 Pages

TI

德州仪器

丝印：LMG3410R150；Package：VQFN；LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

文件：1.01758 Mbytes 页数：35 Pages

TI

德州仪器

丝印：LMG3410R150；Package：VQFN；LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

文件：1.01758 Mbytes 页数：35 Pages

TI

德州仪器