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LMG3411R070RWHR

丝印:LMG3411R070;Package:VQFN;LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design

文件:1.06054 Mbytes 页数:35 Pages

TI

德州仪器

LMG3411R070RWHR

丝印:LMG3411R070;Package:VQFN(RWH);LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design

文件:1.06055 Mbytes 页数:35 Pages

TI

德州仪器

LMG3411R070RWHR.A

丝印:LMG3411R070;Package:VQFN(RWH);LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design

文件:1.06055 Mbytes 页数:35 Pages

TI

德州仪器

LMG3411R070RWHR.A

丝印:LMG3411R070;Package:VQFN;LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design

文件:1.06054 Mbytes 页数:35 Pages

TI

德州仪器

LMG3411R070RWHR.B

丝印:LMG3411R070;Package:VQFN;LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design

文件:1.06054 Mbytes 页数:35 Pages

TI

德州仪器

LMG3411R070RWHT

丝印:LMG3411R070;Package:VQFN;LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design

文件:1.06054 Mbytes 页数:35 Pages

TI

德州仪器

LMG3411R070RWHT

丝印:LMG3411R070;Package:VQFN(RWH);LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design

文件:1.06055 Mbytes 页数:35 Pages

TI

德州仪器

LMG3411R070RWHT.A

丝印:LMG3411R070;Package:VQFN;LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design

文件:1.06054 Mbytes 页数:35 Pages

TI

德州仪器

LMG3411R070RWHT.A

丝印:LMG3411R070;Package:VQFN(RWH);LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design

文件:1.06055 Mbytes 页数:35 Pages

TI

德州仪器

LMG3411R070RWHT.B

丝印:LMG3411R070;Package:VQFN;LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design

文件:1.06054 Mbytes 页数:35 Pages

TI

德州仪器

供应商型号品牌批号封装库存备注价格
TI(德州仪器)
2021+
VQFN-32(8x8)
499
询价
TI/德州仪器
24+
VQFN-32
9600
原装现货,优势供应,支持实单!
询价
TI
25+
VQFN (RWH)
6000
原厂原装,价格优势
询价
TI/德州仪器
25+
VQFN-32
860000
明嘉莱只做原装正品现货
询价
Texas Instruments
23+/22+
2000
原装进口订货7-10个工作日
询价
Texas Instruments
25+
32-VQFN 裸露焊盘
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
TI
24+
con
10000
查现货到京北通宇商城
询价
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
询价
TI/德州仪器
25+
原厂封装
10280
询价
Texas Instruments
2025
8000
全新、原装
询价
更多LMG3411R070供应商 更新时间2026-2-4 13:13:00