LMG3100R017 100V, 97A GaN FET With Integrated Driver

1 Features • Integrated 1.7mΩ GaN FET and driver • Interated high-side level shift and bootstrap • Two LGM3100 can form a half-bridge – No external level shifter needed • 90V continuous, 100V pulsed voltage rating • Package optimized for easy PCB layout • 5V external bias power supply • Su

文件：1.05958 Mbytes 页数：28 Pages

TI

德州仪器

LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver

1 Features • Integrated 1.7mΩ (LMG3100R017) or 4.4 mΩ (LMG3100R044) GaN FET and driver • 100V continuous, 120V pulsed voltage rating • Interated high-side level shift and bootstrap • Two LMG3100 can form a half-bridge – No external level shifter needed • 5V external bias power supply • Sup

文件：1.15872 Mbytes 页数：30 Pages

TI

德州仪器

LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver

1 Features • Integrated 1.7mΩ (LMG3100R017) or 4.4 mΩ (LMG3100R044) GaN FET and driver • 100V continuous, 120V pulsed voltage rating • Interated high-side level shift and bootstrap • Two LMG3100 can form a half-bridge – No external level shifter needed • 5V external bias power supply • Sup

文件：1.63277 Mbytes 页数：36 Pages

TI

德州仪器

具有集成驱动器的 100V 1.7mΩ GaN FET

LMG3100 器件是一款具有集成驱动器的 90V、97A 氮化镓 (GaN)。该器件包含一个由高频 GaN FET 驱动器驱动的 100V GaN FET。LMG3100 包含一个高侧电平转换器和自举电路，因此可以使用两个 LMG3100 器件形成半桥，而无需额外的电平转换器。\n\nGaN FET 在功率转换方面优势极为显著，因为它们的反向恢复接近零，而且输入电容 CISS 和输出电容 COSS 都极小。所有器件均安装在一个完全无键合线的封装平台上，尽可能减少了封装寄生元件数。LMG3100 器件采用 6.5mm × 4mm × 0.89mm 无铅封装，可轻松安装在 PCB 上。\n\n无 集成了 1.7mΩ GaN FET 和驱动器\n \n集成了高侧电平转换和自举\n \n两个 LGM3100 可构成一个半桥 \n \n无需外部电平转换器\n \n\n \n90V 连续 100V 脉冲式电压额定值\n \n封装经过优化，便于 PCB 布局\n \n5V 外部辅助电源\n \n支持 3.3V 和 5V 输入逻辑电平\n \n高压摆率开关，低振铃\n \n栅极驱动器支持高达 10MHz 的开关频率\n \n内部自举电源电压钳位，可防止 GaN FET 过驱动\n \n电源轨欠压锁定保护\n \n出色的传播延迟（典型值 29.5ns）和匹配（典型值 12ns）\n \n低功耗\n ;

TI

德州仪器

LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver

1 Features • Integrated 1.7mΩ (LMG3100R017) or 4.4 mΩ (LMG3100R044) GaN FET and driver • 100V continuous, 120V pulsed voltage rating • Interated high-side level shift and bootstrap • Two LMG3100 can form a half-bridge – No external level shifter needed • 5V external bias power supply • Sup

文件：1.15872 Mbytes 页数：30 Pages

TI

德州仪器

LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver

1 Features • Integrated 1.7mΩ (LMG3100R017) or 4.4 mΩ (LMG3100R044) GaN FET and driver • 100V continuous, 120V pulsed voltage rating • Interated high-side level shift and bootstrap • Two LMG3100 can form a half-bridge – No external level shifter needed • 5V external bias power supply • Sup

文件：1.63277 Mbytes 页数：36 Pages

TI

德州仪器

丝印：3100R17；Package：VQFN-FCRLF；LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver

1 Features • Integrated 1.7mΩ (LMG3100R017) or 4.4 mΩ (LMG3100R044) GaN FET and driver • 100V continuous, 120V pulsed voltage rating • Interated high-side level shift and bootstrap • Two LMG3100 can form a half-bridge – No external level shifter needed • 5V external bias power supply • Sup

文件：1.63277 Mbytes 页数：36 Pages

TI

德州仪器