LMG3100R017

LMG3100R017 100V, 97A GaN FET With Integrated Driver

1Features •Integrated1.7mΩGaNFETanddriver •Interatedhigh-sidelevelshiftandbootstrap •TwoLGM3100canformahalf-bridge –Noexternallevelshifterneeded •90Vcontinuous,100Vpulsedvoltagerating •PackageoptimizedforeasyPCBlayout •5Vexternalbiaspowersupply •Su

LMG3100R017

LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver

1Features •Integrated1.7mΩ(LMG3100R017)or4.4mΩ (LMG3100R044)GaNFETanddriver •100Vcontinuous,120Vpulsedvoltagerating •Interatedhigh-sidelevelshiftandbootstrap •TwoLMG3100canformahalf-bridge –Noexternallevelshifterneeded •5Vexternalbiaspowersupply •Sup

LMG3100R017

LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver

1Features •Integrated1.7mΩ(LMG3100R017)or4.4mΩ (LMG3100R044)GaNFETanddriver •100Vcontinuous,120Vpulsedvoltagerating •Interatedhigh-sidelevelshiftandbootstrap •TwoLMG3100canformahalf-bridge –Noexternallevelshifterneeded •5Vexternalbiaspowersupply •Sup

LMG3100R017

具有集成驱动器的 100V 1.7mΩ GaN FET; 集成了 1.7mΩ GaN FET 和驱动器\n \n集成了高侧电平转换和自举\n \n两个 LGM3100 可构成一个半桥 \n \n无需外部电平转换器\n \n\n \n90V 连续 100V 脉冲式电压额定值\n \n封装经过优化，便于 PCB 布局\n \n5V 外部辅助电源\n \n支持 3.3V 和 5V 输入逻辑电平\n \n高压摆率开关，低振铃\n \n栅极驱动器支持高达 10MHz 的开关频率\n \n内部自举电源电压钳位，可防止 GaN FET 过驱动\n \n电源轨欠压锁定保护\n \n出色的传播延迟（典型值 29.5ns）和匹配（典型值 12ns）\n \n低功耗\n \n用于连接散热器的外露式顶部 QFN 封装;

LMG3100 器件是一款具有集成驱动器的 90V、97A 氮化镓 (GaN)。该器件包含一个由高频 GaN FET 驱动器驱动的 100V GaN FET。LMG3100 包含一个高侧电平转换器和自举电路，因此可以使用两个 LMG3100 器件形成半桥，而无需额外的电平转换器。\n\nGaN FET 在功率转换方面优势极为显著，因为它们的反向恢复接近零，而且输入电容 CISS 和输出电容 COSS 都极小。所有器件均安装在一个完全无键合线的封装平台上，尽可能减少了封装寄生元件数。LMG3100 器件采用 6.5mm × 4mm × 0.89mm 无铅封装，可轻松安装在 PCB 上。\n\n无论 VCC 电压如何，TTL 逻辑兼容输入均可支持 3.3V 和 5V 逻辑电平。专有的自举电压钳位技术确保了增强模式 GaN FET 的栅极电压处于安全的工作范围内。\n\n该器件配有用户友好型接口且更为出色，进一步提升了分立式 GaN FET 的优势。对于需要小尺寸、高频、高效运行的应用来说，该器件是理想的解决方案。

LMG3100R017_V01

LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver

1Features •Integrated1.7mΩ(LMG3100R017)or4.4mΩ (LMG3100R044)GaNFETanddriver •100Vcontinuous,120Vpulsedvoltagerating •Interatedhigh-sidelevelshiftandbootstrap •TwoLMG3100canformahalf-bridge –Noexternallevelshifterneeded •5Vexternalbiaspowersupply •Sup

LMG3100R017_V02

LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver

1Features •Integrated1.7mΩ(LMG3100R017)or4.4mΩ (LMG3100R044)GaNFETanddriver •100Vcontinuous,120Vpulsedvoltagerating •Interatedhigh-sidelevelshiftandbootstrap •TwoLMG3100canformahalf-bridge –Noexternallevelshifterneeded •5Vexternalbiaspowersupply •Sup

LMG3100R017VBER

丝印：3100R17；Package：VQFN-FCRLF；LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver

1Features •Integrated1.7mΩ(LMG3100R017)or4.4mΩ (LMG3100R044)GaNFETanddriver •100Vcontinuous,120Vpulsedvoltagerating •Interatedhigh-sidelevelshiftandbootstrap •TwoLMG3100canformahalf-bridge –Noexternallevelshifterneeded •5Vexternalbiaspowersupply •Sup