LMG3100R017_V01中文资料德州仪器数据手册PDF规格书

1 Features

• Integrated 1.7mΩ (LMG3100R017) or 4.4 mΩ

(LMG3100R044) GaN FET and driver

• 100V continuous, 120V pulsed voltage rating

• Interated high-side level shift and bootstrap

• Two LMG3100 can form a half-bridge

– No external level shifter needed

• 5V external bias power supply

• Supports 3.3V and 5V input logic levels

• High slew rate switching with low ringing

• Gate driver capable of up to 10MHz switching

• Internal bootstrap supply voltage clamping to

prevent GaN FET overdrive

• Supply rail undervoltage lockout protection

• Low power consumption

• Package optimized for easy PCB layout

• Exposed top QFN package for top-side cooling

• Large exposed pads at bottom for bottom-side

cooling

2 Applications

• Buck, boost, and buck-boost converters

• LLC converters

• Solar inverters

• Telecom and server power

• Motor drives

• Power tools

• Class-D audio amplifiers

3 Description

The LMG3100 device is a 100V continuous, 120V

pulsed Gallium Nitride (GaN) FET with integrated

driver. Device is offered in two Rds(on) and max

current variants, 126A/1.7mΩ for LMG3100R017 and

46A/4.4mΩ for LMG3100R044. The device consists

of a 100V GaN FET driven by a high-frequency

GaN FET driver. The LMG3100 incorporates a high

side level shifter and bootstrap circuit, so that two

LMG3100 devices can be used to form a half bridge

without an additional level shifter.

GaN FETs provide significant advantages for power

conversion as they have zero reverse recovery

and very small input capacitance CISS and output

capacitance COSS. The driver and the GaN FET are

mounted on a completely bond-wire free package

platform with minimized package parasitic elements.

The LMG3100 device is available in a 6.5mm ×

4mm × 0.89mm lead-free package and can be easily

mounted on PCBs.

The TTL logic compatible inputs can support 3.3V

and 5V logic levels regardless of the VCC voltage.

The proprietary bootstrap voltage clamping technique

ensures the gate voltages of the enhancement mode

GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN

FETs by offering a more user-friendly interface. It

is an ideal solution for applications requiring highfrequency,

high-efficiency operation in a small form

factor.