LMG1020 5-V, 7-A, 5-A Low-Side GaN and MOSFET Driver For 1-ns Pulse Width Applications

1 Features 1• Low-Side, Ultra-Fast Gate Driver for GaN and Silicon FETs • 1 ns Minimum Input Pulse Width • Up to 60 MHz Operation • 2.5 ns Typical, 4.5 ns Maximum Propagation Delay • 400 ps Typical Rise and Fall Time • 7-A Peak Source and 5-A Peak Sink Currents • 5-V Supply Voltage • UVL

文件：1.08708 Mbytes 页数：25 Pages

TI

德州仪器

LMG1020 5-V, 7-A, 5-A Low-Side GaN and MOSFET Driver For 1-ns Pulse Width Applications

1 Features 1• Low-Side, Ultra-Fast Gate Driver for GaN and Silicon FETs • 1 ns Minimum Input Pulse Width • Up to 60 MHz Operation • 2.5 ns Typical, 4.5 ns Maximum Propagation Delay • 400 ps Typical Rise and Fall Time • 7-A Peak Source and 5-A Peak Sink Currents • 5-V Supply Voltage • UVL

文件：1.08708 Mbytes 页数：25 Pages

TI

德州仪器

LMG1025-Q1 Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications

1 Features • AEC-Q100 grade 1 qualified • 1.25ns typical minimum input pulse width • 2.6ns typical rising propagation delay • 2.9ns typical falling propagation delay • 300ps typical pulse distortion • Independent 7A pull-up and 5A pull-down current • 650ps typical rise time (220pF load) •

文件：2.21134 Mbytes 页数：30 Pages

TI

德州仪器

丝印：LQ25；Package：WSON(DRV)；LMG1025-Q1 Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications

1 Features • AEC-Q100 grade 1 qualified • 1.25ns typical minimum input pulse width • 2.6ns typical rising propagation delay • 2.9ns typical falling propagation delay • 300ps typical pulse distortion • Independent 7A pull-up and 5A pull-down current • 650ps typical rise time (220pF load) •

文件：2.21134 Mbytes 页数：30 Pages

TI

德州仪器

丝印：LQ25；Package：WSON(DRV)；LMG1025-Q1 Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications

1 Features • AEC-Q100 grade 1 qualified • 1.25ns typical minimum input pulse width • 2.6ns typical rising propagation delay • 2.9ns typical falling propagation delay • 300ps typical pulse distortion • Independent 7A pull-up and 5A pull-down current • 650ps typical rise time (220pF load) •

文件：2.21134 Mbytes 页数：30 Pages

TI

德州仪器

LMG1208 100V Dual Floating Gate Driver for MOSFET and GaN FET With Integrated Current Sense Amplifier

1 Features • Dual floating gate driver • 120V absolute maximum voltage on bootstrap supply (HB, LB) pins supporting 100V on the halfbridge • 5A peak source and 6A peak sink current strength at 12V for silicon N-channel power FETs • 3.5A peak source and 4.5A peak sink current strength at 5V

文件：1.47591 Mbytes 页数：44 Pages

TI

德州仪器

LMG1208 100V Dual Floating Gate Driver for MOSFET and GaN FET With Integrated Current Sense Amplifier

1 Features • Dual floating gate driver • 120V absolute maximum voltage on bootstrap supply (HB, LB) pins supporting 100V on the halfbridge • 5A peak source and 6A peak sink current strength at 12V for silicon N-channel power FETs • 3.5A peak source and 4.5A peak sink current strength at 5V

文件：1.47591 Mbytes 页数：44 Pages

TI

德州仪器

LMG2100R026 100V, 53A GaN Half-Bridge Power Stage

1 Features • Integrated half-bridge GaN FETs and driver • 93V continuous, 100V pulsed voltage rating • Package optimized for easy PCB layout • High slew rate switching with low ringing • 5V external bias power supply • Supports 3.3V and 5V input logic levels • Gate driver capable of up to 1

文件：1.93342 Mbytes 页数：25 Pages

TI

德州仪器

LMG2100R026 100V, 53A GaN Half-Bridge Power Stage

1 Features • Integrated half-bridge GaN FETs and driver • 93V continuous, 100V pulsed voltage rating • Package optimized for easy PCB layout • High slew rate switching with low ringing • 5V external bias power supply • Supports 3.3V and 5V input logic levels • Gate driver capable of up to 1

文件：1.63129 Mbytes 页数：30 Pages

TI

德州仪器

LMG2100R026 100V, 53A GaN Half-Bridge Power Stage

1 Features • Integrated half-bridge GaN FETs and driver • 93V continuous, 100V pulsed voltage rating • Package optimized for easy PCB layout • High slew rate switching with low ringing • 5V external bias power supply • Supports 3.3V and 5V input logic levels • Gate driver capable of up to 1

文件：1.63129 Mbytes 页数：30 Pages

TI

德州仪器