LMG1208 100V Dual Floating Gate Driver for MOSFET and GaN FET With Integrated Current Sense Amplifier

1 Features • Dual floating gate driver • 120V absolute maximum voltage on bootstrap supply (HB, LB) pins supporting 100V on the halfbridge • 5A peak source and 6A peak sink current strength at 12V for silicon N-channel power FETs • 3.5A peak source and 4.5A peak sink current strength at 5V

文件：1.47591 Mbytes 页数：44 Pages

TI

德州仪器

LMG1208 100V Dual Floating Gate Driver for MOSFET and GaN FET With Integrated Current Sense Amplifier

1 Features • Dual floating gate driver • 120V absolute maximum voltage on bootstrap supply (HB, LB) pins supporting 100V on the halfbridge • 5A peak source and 6A peak sink current strength at 12V for silicon N-channel power FETs • 3.5A peak source and 4.5A peak sink current strength at 5V

文件：1.47591 Mbytes 页数：44 Pages

TI

德州仪器

CCD LINEAR IMAGE SENSOR

文件：423.33 Kbytes 页数：13 Pages

TOSHIBA

东芝

SOLID STATE IGBT GATE DRIVER MODULE

TOSHIBS SOLID STATE IGBT GATE DRIVER MODULE TOSHIBA TF1208 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability and compact system.

文件：231.99 Kbytes 页数：5 Pages

TOSHIBA

东芝

1A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE & FIXED REGULATOR

DESCRIPTION The US1206 family of devices are ultra low dropout 1A regulators using PNP transistor as the pass element. These products are ideal when a single input supply is available only and the dropout voltage is less than 1V, exceeding the minimum dropout characteristics of NPN/PNP hybrid reg

文件：39.81 Kbytes 页数：7 Pages

UNISEM