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LMG2100R044

LMG2100R044 100-V, 35-A GaN Half-Bridge Power Stage

1 Features • Integrated 4.4-mΩ GaN FETs and driver • 80-V continuous, 100-V pulsed voltage rating • Package optimized for easy PCB layout • 5-V external bias power supply • Supports 3.3-V, 5-V and 12-V input logic levels • High slew rate switching with low ringing • Gate driver capable of u

文件:916.88 Kbytes 页数:26 Pages

TI

德州仪器

LMG2100R044

LMG2100R044 100V, 35A GaN Half-Bridge Power Stage

1 Features • Integrated 4.4mΩ half-bridge GaN FETs and driver • 90V continuous, 100V pulsed voltage rating • Package optimized for easy PCB layout • High slew rate switching with low ringing • 5V external bias power supply • Supports 3.3V and 5V input logic levels • Gate driver capable of u

文件:1.37641 Mbytes 页数:28 Pages

TI

德州仪器

LMG2100R044

具有集成驱动器和保护功能的 100V 4.4mΩ 半桥 GaN FET

LMG2100R044 器件是一款 80V 连续 100V 脉冲式 35A 半桥功率级,具有集成栅极驱动器和增强模式氮化镓 (GaN) FET。该器件包含两个 100V GaN FET,这两者由采用半桥配置的同一高频 80V GaN FET 驱动器进行驱动。\n\nGaN FET 在功率转换方面优势极为显著,因为它们的反向恢复接近零,而且输入电容 C ISS 和输出电容 C OSS 都极小。所有器件均安装在一个完全无键合线的封装平台上,尽可能减少了封装寄生元件数。LMG2100R044 器件采用 5.5mm × 4.5mm × 0.89mm 无铅封装,可轻松安装在 PCB 上。\n\n该器件的 • Integrated 4.4-mΩ GaN FETs and driver\n• 80-V continuous, 100-V pulsed voltage rating\n• Package optimized for easy PCB layout\n• 5-V external bias power supply \n• Supports 3.3-V, 5-V and 12-V input logic levels\n• High slew rate switching with low ringing \n• Gate driver capable of up to 10-MHz ;

TI

德州仪器

LMG2100R044_V01

LMG2100R044 100V, 35A GaN Half-Bridge Power Stage

1 Features • Integrated 4.4mΩ half-bridge GaN FETs and driver • 90V continuous, 100V pulsed voltage rating • Package optimized for easy PCB layout • High slew rate switching with low ringing • 5V external bias power supply • Supports 3.3V and 5V input logic levels • Gate driver capable of u

文件:1.37641 Mbytes 页数:28 Pages

TI

德州仪器

LMG2100R044RARR

丝印:G2100;Package:VQFN-FCRLF;LMG2100R044 100V, 35A GaN Half-Bridge Power Stage

1 Features • Integrated 4.4mΩ half-bridge GaN FETs and driver • 90V continuous, 100V pulsed voltage rating • Package optimized for easy PCB layout • High slew rate switching with low ringing • 5V external bias power supply • Supports 3.3V and 5V input logic levels • Gate driver capable of u

文件:1.37641 Mbytes 页数:28 Pages

TI

德州仪器

技术参数

  • RDS(on) (mΩ):

    4.4

  • ID (max) (A):

    35

  • Features:

    Built-in bootstrap diode

  • Rating:

    Catalog

  • Operating temperature range (°C):

    -40 to 125

  • 封装:

    WQFN-FCRLF (RAR)

  • 引脚:

    16

  • 尺寸:

    See data sheet

供应商型号品牌批号封装库存备注价格
TI/德州仪器
2450+
VQFN-FCRLF(RAR)16
9850
只做原厂原装正品现货或订货假一赔十!
询价
TI(德州仪器)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
询价
TI(德州仪器)
25+
N/A
18746
账期支持,原厂技术提供,可BOM配齐,一站式服务!
询价
TI(德州仪器)
25+
N/A
18798
原厂直供,可原型号开票!
询价
TI
2535
VQFN-16
5000
只做原装正品
询价
TI德州仪器
22+
24000
原装正品现货,实单可谈,量大价优
询价
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
询价
TI/德州仪器
25+
原厂封装
10280
询价
TI/德州仪器
25+
原厂封装
11000
询价
TI/德州仪器
25+
原厂封装
10280
询价
更多LMG2100R044供应商 更新时间2026-2-5 9:25:00