LMG210xR0xx 100V GaN Half-Bridge Power Stage With Integrated Protection and Smart-Switching Features

1 Features • GaN half bridge power stage with integrated driver: 100V (GaN FET options: 2.2mΩ, 4.4mΩ) • Efficient and high-density power conversion with – Ultra-low propagation delay (20ns) and matching (2ns) – Independent turn-on and turn-off slew-rate control for both the GaN FETs – Zero-vo

文件：2.25603 Mbytes 页数：15 Pages

TI

德州仪器

LMG210xR0xx 100V GaN Half-Bridge Power Stage With Integrated Protection and Smart-Switching Features

1 Features • GaN half bridge power stage with integrated driver: 100V (GaN FET options: 2.2mΩ, 4.4mΩ) • Efficient and high-density power conversion with – Ultra-low propagation delay (20ns) and matching (2ns) – Independent turn-on and turn-off slew-rate control for both the GaN FETs – Zero-vo

文件：2.42054 Mbytes 页数：18 Pages

TI

德州仪器

LMG210xR0xx 100V GaN Half-Bridge Power Stage With Integrated Protection and Smart-Switching Features

1 Features • GaN half bridge power stage with integrated driver: 100V (GaN FET options: 2.2mΩ, 4.4mΩ) • Efficient and high-density power conversion with – Ultra-low propagation delay (20ns) and matching (2ns) – Independent turn-on and turn-off slew-rate control for both the GaN FETs – Zero-vo

文件：2.25603 Mbytes 页数：15 Pages

TI

德州仪器

LMG210xR0xx 100V GaN Half-Bridge Power Stage With Integrated Protection and Smart-Switching Features

1 Features • GaN half bridge power stage with integrated driver: 100V (GaN FET options: 2.2mΩ, 4.4mΩ) • Efficient and high-density power conversion with – Ultra-low propagation delay (20ns) and matching (2ns) – Independent turn-on and turn-off slew-rate control for both the GaN FETs – Zero-vo

文件：2.42054 Mbytes 页数：18 Pages

TI

德州仪器

LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters

1 Features • 650-V GaN power-FET half bridge • 170-mΩ low-side and 248-mΩ high-side GaN FETs • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive inter

文件：1.39575 Mbytes 页数：34 Pages

TI

德州仪器

LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters

1 Features • 650-V GaN power-FET half bridge • 170-mΩ low-side and 248-mΩ high-side GaN FETs • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive inter

文件：1.28785 Mbytes 页数：42 Pages

TI

德州仪器

LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters

1 Features • 650-V GaN power-FET half bridge • 170-mΩ low-side and 248-mΩ high-side GaN FETs • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive inter

文件：1.28785 Mbytes 页数：42 Pages

TI

德州仪器

丝印：LMG2610NNNNC；Package：VQFN；LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters

1 Features • 650-V GaN power-FET half bridge • 170-mΩ low-side and 248-mΩ high-side GaN FETs • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive inter

文件：1.28785 Mbytes 页数：42 Pages

TI

德州仪器

丝印：LMG2610NNNNC；Package：VQFN；LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters

1 Features • 650-V GaN power-FET half bridge • 170-mΩ low-side and 248-mΩ high-side GaN FETs • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive inter

文件：1.28785 Mbytes 页数：42 Pages

TI

德州仪器

LMG2640 Integrated 650V GaN Half Bridge

1 Features • 650V GaN power-FET half bridge • 105mΩ low-side and high-side GaN FETs • Integrated gate drivers with low propagation delays • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive interlock • High-side gate-drive signal level shifter

文件：1.42282 Mbytes 页数：41 Pages

TI

德州仪器