LMG310xR0xx 100V GaN Power Stage With Integrated Protection and Smart-Switching Features

1 Features • 100V GaN power stage with integrated driver: (GaN FET RDS(ON) options: 1.1mΩ and 1.7mΩ) • Integrated high-side level shift and bootstrap – Two LMG310xR0xx can form a half-bridge – No external level shifter is required • Efficient and high-density power conversion with – Ultra-lo

文件：922.49 Kbytes 页数：14 Pages

TI

德州仪器

LMG310xR0xx 100V GaN Power Stage With Integrated Protection and Smart-Switching Features

1 Features • 100V GaN power stage with integrated driver: (GaN FET RDS(ON) options: 1.1mΩ and 1.7mΩ) • Integrated high-side level shift and bootstrap – Two LMG310xR0xx can form a half-bridge – No external level shifter is required • Efficient and high-density power conversion with – Ultra-lo

文件：921.91 Kbytes 页数：14 Pages

TI

德州仪器

LMG310xR0xx 100V GaN Power Stage With Integrated Protection and Smart-Switching Features

1 Features • 100V GaN power stage with integrated driver: (GaN FET RDS(ON) options: 1.1mΩ and 1.7mΩ) • Integrated high-side level shift and bootstrap – Two LMG310xR0xx can form a half-bridge – No external level shifter is required • Efficient and high-density power conversion with – Ultra-lo

文件：922.49 Kbytes 页数：14 Pages

TI

德州仪器

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

文件：1.11817 Mbytes 页数：37 Pages

TI

德州仪器

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

文件：1.11774 Mbytes 页数：37 Pages

TI

德州仪器

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

文件：1.1146 Mbytes 页数：37 Pages

TI

德州仪器

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

文件：1.11817 Mbytes 页数：37 Pages

TI

德州仪器

丝印：LMG3410R050；Package：VQFN(RWH)；LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

文件：1.11817 Mbytes 页数：37 Pages

TI

德州仪器

丝印：LMG3410R050；Package：VQFN；LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

文件：1.1146 Mbytes 页数：37 Pages

TI

德州仪器

丝印：LMG3410R050；Package：VQFN；LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

文件：1.11774 Mbytes 页数：37 Pages

TI

德州仪器