LMG1025QDRVRQ1.A中文资料德州仪器数据手册PDF规格书

1 Features

• AEC-Q100 grade 1 qualified

• 1.25ns typical minimum input pulse width

• 2.6ns typical rising propagation delay

• 2.9ns typical falling propagation delay

• 300ps typical pulse distortion

• Independent 7A pull-up and 5A pull-down current

• 650ps typical rise time (220pF load)

• 850ps typical fall time (220pF load)

• 2mm x 2mm QFN package

• Inverting and non-inverting inputs

• UVLO and over-temperature protection

• Single 5V supply voltage

2 Applications

• Automotive LIDAR

• Driver monitoring

• Vehicle occupant detection sensor

• DC/DC converter

3 Description

The LMG1025-Q1 is a single channel low-side

enhancement-mode GaN FET and logic-level

MOSFET driver for high switching frequency

automotive applications. Narrow pulse width

capability, fast switching specification, and small

pulse distortion combine to significantly enhance

LiDAR, ToF, and Power Converter performance.

1.25ns output pulse width enables more powerful,

eye-safe diode pulses. This, combined with 300ns

distortion, leads to longer-range, precise LiDAR/ToF

systems. 2.9ns propagation delay significantly

improves the control loop response time and thus

overall performance of the power converters. Split

output allows the drive strength and timing to be

independently adjusted through external resistors

between OUTH, OUTL, and the FET gate.

The driver features undervoltage lockout (UVLO)

and over-temperature protection (OTP) to ensure the

device is not damaged in overload or fault conditions.

LMG1025-Q1 is available in a compact, leadless,

AEC-Q100 automotive qualified package to meet the

size and gate loop inductance requirements of high

switching frequency automotive applications.