LMG1020YFFR.A中文资料德州仪器数据手册PDF规格书

1 Features

1• Low-Side, Ultra-Fast Gate Driver for GaN and

Silicon FETs

• 1 ns Minimum Input Pulse Width

• Up to 60 MHz Operation

• 2.5 ns Typical, 4.5 ns Maximum Propagation

Delay

• 400 ps Typical Rise and Fall Time

• 7-A Peak Source and 5-A Peak Sink Currents

• 5-V Supply Voltage

• UVLO and Overtemperature Protection

• 0.8 mm × 1.2 mm WCSP Package

2 Applications

• LiDAR

• Time-of-Flight Laser Drivers

• Facial Recognition

• Class-E Wireless Chargers

• VHF Resonant Power Converters

• GaN-Based Synchronous Rectifier

• Augmented Reality

3 Description

The LMG1020 device is a single, low-side driver

designed for driving GaN FETs and logic-level

MOSFETs in high-speed applications including

LiDAR, time-of-flight, facial recognition, and any

power converters involving low side drivers. The

design simplicity of the LMG1020 enables extremely

fast propagation delays of 2.5 nanoseconds and

minimum pulse width of 1 nanosecond. The drive

strength is independently adjustable for the pull-up

and pull-down edges by connecting external resistors

between the gate and OUTH and OUTL, respectively.

The driver features undervoltage lockout (UVLO) and

overtemperature protection (OTP) in the event of

overload or fault conditions.

0.8-mm × 1.2-mm WCSP package of LMG1020

minimizes gate loop inductance and maximizes

power density in high-frequency applications.