丝印：LMG；Package：WSON(DEE)；LMG1025-Q1 Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications

1 Features • AEC-Q100 grade 1 qualified • 1.25ns typical minimum input pulse width • 2.6ns typical rising propagation delay • 2.9ns typical falling propagation delay • 300ps typical pulse distortion • Independent 7A pull-up and 5A pull-down current • 650ps typical rise time (220pF load) •

文件：2.21134 Mbytes 页数：30 Pages

TI

德州仪器

丝印：LMG；Package：WSON(DEE)；LMG1025-Q1 Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications

1 Features • AEC-Q100 grade 1 qualified • 1.25ns typical minimum input pulse width • 2.6ns typical rising propagation delay • 2.9ns typical falling propagation delay • 300ps typical pulse distortion • Independent 7A pull-up and 5A pull-down current • 650ps typical rise time (220pF load) •

文件：2.21134 Mbytes 页数：30 Pages

TI

德州仪器

丝印：LMG；Package：WSON(DEE)；LMG1025-Q1 Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications

1 Features • AEC-Q100 grade 1 qualified • 1.25ns typical minimum input pulse width • 2.6ns typical rising propagation delay • 2.9ns typical falling propagation delay • 300ps typical pulse distortion • Independent 7A pull-up and 5A pull-down current • 650ps typical rise time (220pF load) •

文件：2.21134 Mbytes 页数：30 Pages

TI

德州仪器

丝印：LMG；Package：WSON(DEE)；LMG1025-Q1 Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications

1 Features • AEC-Q100 grade 1 qualified • 1.25ns typical minimum input pulse width • 2.6ns typical rising propagation delay • 2.9ns typical falling propagation delay • 300ps typical pulse distortion • Independent 7A pull-up and 5A pull-down current • 650ps typical rise time (220pF load) •

文件：2.21134 Mbytes 页数：30 Pages

TI

德州仪器

丝印：LMG2610NNNNC；Package：VQFN；LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters

1 Features • 650-V GaN power-FET half bridge • 170-mΩ low-side and 248-mΩ high-side GaN FETs • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive inter

文件：1.28785 Mbytes 页数：42 Pages

TI

德州仪器

丝印：LMG2610NNNNC；Package：VQFN；LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters

1 Features • 650-V GaN power-FET half bridge • 170-mΩ low-side and 248-mΩ high-side GaN FETs • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive inter

文件：1.28785 Mbytes 页数：42 Pages

TI

德州仪器

丝印：LMG2640NNNNC；Package：VQFN；LMG2640 Integrated 650V GaN Half Bridge

1 Features • 650V GaN power-FET half bridge • 105mΩ low-side and high-side GaN FETs • Integrated gate drivers with low propagation delays • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive interlock • High-side gate-drive signal level shifter

文件：1.42282 Mbytes 页数：41 Pages

TI

德州仪器

丝印：LMG2652；Package：VQFN；LMG2652 650V 140mΩ GaN Half Bridge With Integrated Driver and Current Sense Emulation

1 Features • 650V GaN power-FET half bridge • 140mΩ low-side and high-side GaN FETs • Integrated gate drivers with

文件：1.56704 Mbytes 页数：35 Pages

TI

德州仪器

丝印：LMG2656NNNNC；Package：VQFN(RFB)；LMG2656 650V 230mΩ GaN Half Bridge With Integrated Driver and Current Sense Emulation

1 Features • 650V GaN power-FET half bridge • 230mΩ low-side and high-side GaN FETs • Integrated gate drivers with

文件：1.77236 Mbytes 页数：43 Pages

TI

德州仪器

丝印：LMG3410R050；Package：VQFN；LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

文件：1.11774 Mbytes 页数：37 Pages

TI

德州仪器