DMMT3904WQ-7-F

Marking：K4A；Package：SOT363；40V MATCHED PAIR NPN SMALL SIGNAL TRANSISTOR IN SOT363

Features BVCEO>40V IC=200mAHighCollectorCurrent PairofNPNTransistorsthatareIntrinsicallyMatched(Note1) 2MatchingonCurrentGain(hFE) 2mVMatchingonBase-EmitterVoltage(VBE) FullyInternallyIsolatedinaSmallSurfaceMountPackage TotallyLead-Free&Ful

LM158QT

Marking：K4A；Package：DFN8；Low-power dual operational amplifiers

Features Frequencycompensationimplementedinternally LargeDCvoltagegain:100dB Widebandwidth(unitygain):1.1MHz(temperaturecompensated) Verylowsupplycurrentperchannelessentiallyindependentofsupplyvoltage Lowinputbiascurrent:20nA(temperaturecompensated) Lowinput

XPH2R404PB

Marking：K4A；Package：SOP；MOSFETs Silicon N-channel MOS

Applications •Automotive •MotorDrivers •SwitchingVoltageRegulators Features (1)AEC-Q101qualified (2)Small,thinpackage (3)Lowdrain-sourceon-resistance:RDS(ON)=1.8mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=40V) (5)Enhancementmode:Vth=2.

AZ431AK-BTR

Marking：K4A；Package：SOT-23-5；Programmable Precise Output Voltage from 2.5V to 36V or 18V

TK4A60DB

Marking：K4A60DB；TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=1.6Ω(typ.) •Highforwardtransferadmittance:|Yfs|=2.2S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) •Enhancementmode:Vth=2.4to4.4V(VDS=10V,ID=1mA)

TK4A80E

Marking：K4A80E；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=2.8Ω(typ.) (2)Lowleakagecurrent:IDSS=10μA(max)(VDS=640V) (3)Enhancementmode:Vth=2.5to4.0V(VDS=10V,ID=0.4mA)