MMBT5401W

Marking：K4M；Package：SOT-323；TRANSISTOR(PNP)

FEATURES ComplementarytoMMBT5551W SmallSurfaceMountPackage IdealforMediumPowerAmplificationandSwitching

MMDT5401

Marking：K4M；Package：SOT-363；Epitaxial Planar Die Construction

Features EpitaxialPlanarDieConstruction ComplementaryNPNTypeAvailable(MMDT5551) IdealforMediumPowerAmplificationandSwitching Ultra-SmallSurfaceMountPackage LeadFree/RoHSCompliant(Note3) GreenDevice(Note4and5)

MMDT5401

Marking：K4M；Package：SOT-363；SOT-363 Plastic-Encapsulate Transistors

FEATURES EpitaxialPlanarDieConstruction ComplementaryNPNTypeAvailable(MMDT5551) IdealforMediumPowerAmplificationandSwitching

MMDT5401

Marking：K4M；Package：SOT-363；Dual PNP Small Signal Surface Mount Transistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailableMMDT5551. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●ForLowpoweramplificationandswitching.

MMST5401

Marking：K4M；Package：SOT-323；PNP Transistors

■Features ●SmallSurfaceMountPackage ●IdealforMediumPowerAmplificationandSwitching ●ComplementarytoMMST5551

MMST5401

Marking：K4M；Package：SOT-323；SOT-323 Plastic-Encapsulate Transistors

FEATURES ComplementarytoMMST5551 SmallSurfaceMountPackage IdealforMediumPowerAmplificationandSwitching

MMST5401

Marking：K4M；Package：SOT-323；PNP General Purpose Transistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailable(MMST5551). ●Alsoavailableinleadfreeversion. APPLICATIONS ●Idealformediumpoweramplificationandswitching.

XPJR6604PB

Marking：K4M；Package：S-TOGL；MOSFETs Silicon N-channel MOS

Applications •Automotive •SwitchingVoltageRegulators •MotorDrivers •DC-DCConverters Features (1)AEC-Q101qualified (2)Lowdrain-sourceon-resistance:RDS(ON)=0.53mΩ(typ.)(VGS=10V) (3)Lowleakagecurrent:IDSS=10μA(max)(VDS=40V) (4)Enhancementmode:Vth=2.0to

MMBT5401W

Marking：K4M；Package：SOT-323；SOT-323 Plastic-Encapsulate Transistors

MMDT5401Q-7-F

Marking：K4M；Package：SOT-363；150V DUAL PNP SMALL SIGNAL TRANSISTOR