HIGH VOLTAGE SWITCHING TRANSISTOR

DESCRIPTION The UTC 5401 is a high voltage fast-switching dual PNP transistor. It is characterized with high breakdown voltage, high current gain and high switching speed. FEATURES * High Collector-Emitter Voltage: VCEO=-150V * High current gain

文件：110.52 Kbytes 页数：3 Pages

UTC

友顺

DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (MMDT5551) • Ideal for Medium Power Amplification and Switching • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (No

文件：41.35 Kbytes 页数：2 Pages

DIODES

美台半导体

DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (MMDT5551) • Ideal for Medium Power Amplification and Switching • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 3) • Green Device (Note 4 and 5)

文件：170.99 Kbytes 页数：4 Pages

DIODES

美台半导体

Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Marking:K4M • Ideal for Low Power Amplification and Switching • Ultra-small Surface Mount Package • Epitaxial Planar Die Construction • Epoxy meets UL 94 V-0 flammability rating • Moi

文件：116.19 Kbytes 页数：3 Pages

MCC

丝印：K4M；Package：SOT-363；Dual PNP Small Signal Surface Mount Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN type available MMDT5551. ● Ultra-small surface mount package. APPLICATIONS ● For Low power amplification and switching.

文件：146.66 Kbytes 页数：3 Pages

BILIN

银河微电

DUAL TRANSISTOR (PNPPNP)

DUAL TRANSISTOR (PNP+PNP) FEATURES ● Epitaxial Planar Die Construction ● Complementary NPN Type Available(MMDT 5551) ● Ideal for Medium Power Amplification and Switching

文件：4.44045 Mbytes 页数：4 Pages

JIANGSU

长电科技

丝印：K4M；Package：SOT-363；SOT-363 Plastic-Encapsulate Transistors

FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available(MMDT 5551) Ideal for Medium Power Amplification and Switching

文件：1.5168 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：K4M；Package：SOT-363；Epitaxial Planar Die Construction

Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMDT5551) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) Green Device (Note 4 and 5)

文件：853.65 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Plastic-Encapsulate Transistors

FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5551) Ideal for Medium Power Amplification and Switching

文件：189 Kbytes 页数：2 Pages

HOTTECH

合科泰

PNPPNP Plastic-Encapsulate Transistors

Features Epitaxial Planar Die Construction Complementary NPN Type Available(TPMMDT5551) Ideal for Medium Power Amplification and Switching

文件：1.47454 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子