型号：LBAS116LT1G；Package：SOT-23；Surface Mount Low Leakge Diode

FEATURE ● Ultra-Small Surface Mount Package ● Very Low Leakage Current ● Lead Free/RoHS Compliant (Note 2) ● Qualified to AEC-Q101 Standards for High Reliability ● We declare that the material of product compliance with RoHS requirements. ● S- Prefix for Automotive and Other Applications

文件：360.17 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

型号：LBAS116LT3G；Package：SOT-23；Surface Mount Low Leakge Diode

FEATURE ● Ultra-Small Surface Mount Package ● Very Low Leakage Current ● Lead Free/RoHS Compliant (Note 2) ● Qualified to AEC-Q101 Standards for High Reliability ● We declare that the material of product compliance with RoHS requirements. ● S- Prefix for Automotive and Other Applications

文件：360.17 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

型号：LBAW156LT1G；Package：SOT-23；Surface Mount Low Leakge Diode

FEATURE ● Ultra-Small Surface Mount Package ● Very Low Leakage Current ● Lead Free/RoHS Compliant (Note 2) ● Qualified to AEC-Q101 Standards for High Reliability ● We declare that the material of product compliance with RoHS requirements. ● S- Prefix for Automotive and Other Applications

文件：360.17 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

型号：LBAW156LT3G；Package：SOT-23；Surface Mount Low Leakge Diode

FEATURE ● Ultra-Small Surface Mount Package ● Very Low Leakage Current ● Lead Free/RoHS Compliant (Note 2) ● Qualified to AEC-Q101 Standards for High Reliability ● We declare that the material of product compliance with RoHS requirements. ● S- Prefix for Automotive and Other Applications

文件：360.17 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

型号：LMV331ICT；Package：SOT-353；General-purpose low voltage comparator

Description The LMV331 is a single and low voltage version of industry standard LM339 and LM393. It can operate with a supply voltage ranging from 2.7 to 5 V, and exhibits a lower current consumption than its predecessors LM339 and LM393. This device is a perfect choice for low-voltage applicat

文件：479.52 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

型号：IKFW50N60DH3E；Package：PG-TO247-3-AI；TRENCHSTOPTM Advanced Isolation

Features: TRENCHSTOP™ technology offers : • Short circuit withstand time 5μs at Tvj = 175°C • Positive temperature coefficient in VCE(sat) • Low EMI • Very soft, fast recovery anti-parallel diode • Maximum junction temperature 175°C • 2500 VRMS electrical isolation, 50/60 Hz, t = 1 min • 1

文件：2.0062 Mbytes 页数：16 Pages

Infineon

英飞凌

型号：IKQ50N120CH7；Package：PG-TO247-3-PLUS-NN3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 50 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed w

文件：1.63369 Mbytes 页数：17 Pages

Infineon

英飞凌

型号：IKW50N120CH7；Package：PG-TO247-3-STD-NN2.5；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 50 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed w

文件：1.46451 Mbytes 页数：17 Pages

Infineon

英飞凌

型号：IKW50N60TA；Package：PG-TO247-3；Designed for DC/AC converters for Automotive Application

Features: Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive Application Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time 5 µs TRENCHSTOPTM and Fieldstop technology for 600 V applications offers :   - ve

文件：951.92 Kbytes 页数：14 Pages

Infineon

英飞凌

型号：IKWH50N65EH7；Package：PG-TO247-3-STD-NN4.8；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features • VCE = 650 V • IC = 50 A • Low switching losses • Very low collector-emitter saturation voltage VCEsat • Very soft, fast recovery antiparallel diode • Smooth switching behavior • Humidity robustness • Optimized for hard switching, two- and three-level topologies • Complete produ

文件：2.06288 Mbytes 页数：17 Pages

Infineon

英飞凌