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IKWH50N65EH7

Marking:K50EEH7;Package:PG-TO247-3-STD-NN4.8;High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=650V •IC=50A •Lowswitchinglosses •Verylowcollector-emittersaturationvoltageVCEsat •Verysoft,fastrecoveryantiparalleldiode •Smoothswitchingbehavior •Humidityrobustness •Optimizedforhardswitching,two-andthree-leveltopologies •Completeprodu

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IKZA50N65EH7

Marking:K50EEH7;Package:PG-TO247-4-STD-NT3.7;High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=650V •IC=50A •Lowswitchinglosses •Verylowcollector-emittersaturationvoltageVCEsat •Verysoft,fastrecoveryantiparalleldiode •Smoothswitchingbehavior •Humidityrobustness •Optimizedforhardswitching,two-andthree-leveltopologies •Completeprodu

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

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