XPQR3004PB

Marking：K4D；Package：L-TOGLTM；MOSFETs Silicon N-channel MOS (U-MOSⅨ-H)

Applications •Automotive •SwitchingVoltageRegulators •MotorDrivers •DC-DCConverters Features AEC-Q101qualified Lowdrain-sourceon-resistance:RDS(ON)=0.23mΩ(typ.)(VGS=10V) Lowleakagecurrent:IDSS=10μA(max)(VDS=40V) Enhancementmode:Vth=2.0to3.0V(VDS=

IKN04N60RC2

Marking：K4DRC2；Package：PG-SOT223-3；600 V Reverse Conducting Drive 2 offering cost effective IGBT with monolithically integrated diode

Features •VCE=600V •IC=4A •Verytightparameterdistribution •Operatingrangeof1to20kHz •Maximumjunctiontemperature150°C •Shortcircuitcapabilityof3μs •Humidityrobustdesign •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels:htt

IKD04N60RC2

Marking：K4DRC2；Package：PG-TO252-3；Cost effective monolithically integrated IGBT with Diode