丝印：K4D；Package：L-TOGLTM；MOSFETs Silicon N-channel MOS (U-MOSⅨ-H)

Applications • Automotive • Switching Voltage Regulators • Motor Drivers • DC-DC Converters Features AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 0.23 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS =

文件：630.96 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K4DRC2；Package：PG-SOT223-3；600 V Reverse Conducting Drive 2 offering cost effective IGBT with monolithically integrated diode

Features • VCE = 600 V • IC = 4 A • Very tight parameter distribution • Operating range of 1 to 20 kHz • Maximum junction temperature 150°C • Short circuit capability of 3 μs • Humidity robust design • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: htt

文件：1.25911 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：K4DRC2；Package：PG-TO252-3；Cost effective monolithically integrated IGBT with Diode

文件：1.44619 Mbytes 页数：16 Pages

Infineon

英飞凌

1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238A is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high p

文件：298.14 Kbytes 页数：17 Pages

Samsung

三星

1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238A is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high p

文件：298.14 Kbytes 页数：17 Pages

Samsung

三星

1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238A is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high p

文件：298.14 Kbytes 页数：17 Pages

Samsung

三星

1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238A is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high p

文件：298.14 Kbytes 页数：17 Pages

Samsung

三星

1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238A is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high p

文件：298.14 Kbytes 页数：17 Pages

Samsung

三星

1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238A is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high p

文件：298.14 Kbytes 页数：17 Pages

Samsung

三星

1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238D is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high

文件：239.97 Kbytes 页数：18 Pages

Samsung

三星