丝印：K4K；Package：SOP；MOSFETs Silicon N-channel MOS

1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (5) Enhancement mode:

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丝印：K4K1A60F；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON) = 3.38 Ω (typ.) (3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 0.19 mA)

文件：462.04 Kbytes 页数：10 Pages

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