丝印：K4K1A60F；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON) = 3.38 Ω (typ.) (3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 0.19 mA)

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TOSHIBA

东芝

Power MOSFET (N-ch 500V

Application Scope：Switching Voltage Regulators\nPolarity：N-ch\nGeneration：π-MOSⅨ\nInternal Connection：Single\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V \nDrain current ID 2.0 A \nPower Dissipation PD 30 W ;

Toshiba

东芝

DIP-7

TAKION

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TO252

TOSHIBA/东芝

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TO220F

TOSHIBA/东芝

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