丝印：K4J；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • Automotive • Motor Drivers • Switching Voltage Regulators Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (5) Enhancement mode: Vth =

文件：566.46 Kbytes 页数：10 Pages

TOSHIBA

东芝

Graphic Memory

GRAPHIC MEMORY COMPONENT PRODUCT GUIDES

文件：207.54 Kbytes 页数：3 Pages

Samsung

三星

Consumer Memory

SDRAM Product Guide Memory Division November 2007

文件：542.54 Kbytes 页数：15 Pages

Samsung

三星

Graphic Memory

GRAPHIC MEMORY COMPONENT PRODUCT GUIDES

文件：207.54 Kbytes 页数：3 Pages

Samsung

三星

512Mbit GDDR3 SDRAM

GRAPHIC MEMORY COMPONENT PRODUCT GUIDES

文件：1.24693 Mbytes 页数：57 Pages

Samsung

三星

512Mbit GDDR3 SDRAM

GRAPHIC MEMORY COMPONENT PRODUCT GUIDES

文件：1.24693 Mbytes 页数：57 Pages

Samsung

三星

512Mbit GDDR3 SDRAM

GRAPHIC MEMORY COMPONENT PRODUCT GUIDES

文件：1.24693 Mbytes 页数：57 Pages

Samsung

三星

512Mbit GDDR3 SDRAM

GRAPHIC MEMORY COMPONENT PRODUCT GUIDES

文件：1.24693 Mbytes 页数：57 Pages

Samsung

三星

512Mbit GDDR3 SDRAM

GRAPHIC MEMORY COMPONENT PRODUCT GUIDES

文件：1.24693 Mbytes 页数：57 Pages

Samsung

三星

512Mbit GDDR3 SDRAM

GRAPHIC MEMORY COMPONENT PRODUCT GUIDES

文件：1.24693 Mbytes 页数：57 Pages

Samsung

三星