丝印：K4A80E；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (2) Low leakage current : IDSS = 10 μA (max) (VDS = 640 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.4 mA)

文件：385.61 Kbytes 页数：9 Pages

TOSHIBA

东芝

Power MOSFET (N-ch 700V VDSS)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：π-MOSⅧ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 4 A \nPower Dissipation PD 35 W \nDrain-Source voltage VDSS 800 V ;

Toshiba

东芝

Single-Phase Single In-Line Bridge Rectifier

文件：101.73 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

SCRs

General Description Available either in sensitive or standard gate triggering levels, the 4A SCR series is suitable to fit all modes of control found inapplications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, in-rush current limiting circuits

文件：293.32 Kbytes 页数：6 Pages

ADV

爱德微

SCRs

General Description Available either in sensitive or standard gate triggering levels, the 4A SCR series is suitable to fit all modes of control found inapplications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, in-rush current limiting circuits

文件：293.32 Kbytes 页数：6 Pages

ADV

爱德微

SCRs

General Description Available either in sensitive or standard gate triggering levels, the 4A SCR series is suitable to fit all modes of control found inapplications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, in-rush current limiting circuits

文件：293.32 Kbytes 页数：6 Pages

ADV

爱德微