丝印：K12；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：477.75 Kbytes 页数：3 Pages

SY

顺烨电子

丝印：K12；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：477.75 Kbytes 页数：3 Pages

SHUNYE

顺烨电子

丝印：K12；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications

文件：459.51 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：K12；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications

文件：459.51 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：K12；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.52868 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：K12；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：477.13 Kbytes 页数：3 Pages

SY

顺烨电子

丝印：K12；Low Noise 150 mA LDO Regulator

FEATURES • Supply Current Typ. 75 A • Standby Current Typ. 0.1 A • Dropout Voltage Typ. 0.20 V (IOUT = 150 mA, VOUT = 2.8 V) • Ripple Rejec

文件：1.24243 Mbytes 页数：35 Pages

NISSHINBO

日清纺微电子

丝印：K12；0.5A/1A PWM/VFM Step-down DC/DC Converter with Synchronous Rectifier

FEATURES • Input Voltage Range (Maximum Rating)···························· 2.3 V to 5.5 V (6.5 V) • Output Voltage Range (Fixed Output Voltage Type) ············· 0.6 V to 3.3 V, settable in 0.1 V steps (Adjustable Output Voltage Type)······· 0.6 V to 5.5 V • Output Voltage Accuracy (Fixed Ou

文件：1.7155 Mbytes 页数：43 Pages

NISSHINBO

日清纺微电子

丝印：K12；Package：SOD-123FL；SCHOTTKY BARRIER DIODE

FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：542.87 Kbytes 页数：3 Pages

SHUNYE

顺烨电子

丝印：K12；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：542.86 Kbytes 页数：3 Pages

SY

顺烨电子