| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：K13A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, epetitionrate(dutycycle):0.01% | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SY | ||
Marking：K13A50D；TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) SwitchingRegulatorApplications Lowdrain-sourceONresistance:RDS(ON)=0.31Ω(typ.) Highforwardtransferadmittance:⎪Yfs⎪=7.5S(typ.) Lowleakagecurrent:IDSS=10μA(max)(VDS=500V) Enhancement-mode:Vth=2.0to4.0V(VDS=10V,ID=1mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
Marking：K13A60D；Package：SC-67；Switching Regulator Applications SwitchingRegulatorApplications PowerMOSFET(N-ch500V •Lowdrain-sourceON-resistance:RDS(ON)=0.33Ω(typ.) •Highforwardtransferadmittance:|Yfs|=6.5S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) •Enhancementmode:Vth=2.0to | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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