K13A65U

Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.32Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=8.0S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=650V) •Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

TK13A65D

N-Channel650V(D-S)PowerMOSFET

TK13A65D

SwitchingVoltageRegulators

Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.4Ω(typ.) (2)Highforwardtransferadmittance:|Yfs|=7.5S(typ.) (3)Lowleakagecurrent:IDSS=10µA(max)(VDS=650V) (4)Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA) Applications •SwitchingVoltageRegulato

TK13A65D

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(on)=0.4Ω(typ.) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1.0mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

TK13A65U

N-Channel650V(D-S)PowerMOSFET

TK13A65U

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TK13A65U

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(ON)=0.32Ω(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=650V) •Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobu

TK13A65U

FieldEffectTransistorSiliconNChannelMOSType(DTMOS??

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.32Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=8.0S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=650V) •Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA)