Switching Voltage Regulators

Features (1) Low drain-source on-resistance: RDS(ON) = 0.4 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 7.5 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Applications • Switching Voltage Regulato

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TOSHIBA

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isc N-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(on) = 0.4Ω (typ.) • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

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ISC

无锡固电

N-Channel 650V (D-S) Power MOSFET

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VBSEMI

微碧半导体

Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 13 A \nPower Dissipation PD 50 W \nDrain-Source voltage VDSS 650 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

东芝