isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 210mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in

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无锡固电

MOSFETs Silicon N-Channel MOS (DTMOS)

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iscN-Channel MOSFET Transistor

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无锡固电

丝印：K14A65W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 100 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 1

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iscN-Channel MOSFET Transistor

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Power MOSFET (N-ch 500V VDSS 700V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 / 马来西亚 Drain current ID 13.7 A \nPower Dissipation PD 40 W \nDrain-Source voltage VDSS 650 V \nGate-Source voltage VGSS +/-30 V ;

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Power MOSFET (N-ch 500V VDSS 700V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 13.7 A \nPower Dissipation PD 40 W \nDrain-Source voltage VDSS 650 V \nGate-Source voltage VGSS +/-30 V ;

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