型号：DTA124G；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 页数：9 Pages

ROHM

罗姆

型号：MBRS150；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：477.13 Kbytes 页数：3 Pages

SY

顺烨电子

型号：SS1050FL；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：542.86 Kbytes 页数：3 Pages

SY

顺烨电子

型号：DTA124GKA；Package：SOT-346；-100mA / -50V Digital transistors (with built-in resistors)

文件：139.74 Kbytes 页数：3 Pages

ROHM

罗姆

型号：DTA124GKA；Package：SOT-346；Digital transistors (built-in resistor)

文件：62.83 Kbytes 页数：3 Pages

ROHM

罗姆

型号：1.0SMB15A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

文件：1.26024 Mbytes 页数：7 Pages

SY

顺烨电子

型号：1.0SMB15CA；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

文件：1.26024 Mbytes 页数：7 Pages

SY

顺烨电子

型号：2SK1529；Package：SC-65；N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

High-Power Amplifier Application ● High breakdown voltage : VDSS = 180 V ● High forward transfer admittance : |Yfs| = 4.0 S (typ.) ● Complementary to 2SJ200

文件：181.93 Kbytes 页数：3 Pages

TOSHIBA

东芝

型号：IKQ150N65EH7；Package：PG-TO247-3-PLUS-NN3.7；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features • VCE = 650 V • IC = 150 A • Low switching losses • Very low collector-emitter saturation voltage VCEsat • Very soft, fast recovery antiparallel diode • Smooth switching behavior • Humidity robustness • Optimized for hard switching, two- and three-level topologies • Complete prod

文件：2.04798 Mbytes 页数：17 Pages

Infineon

英飞凌

型号：IKW15N120CS7；Package：PG-TO247-3；Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology

Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology copacked with soft and fast recovery Emitter Controlled 7 diode Features • VCE=1200 V • IC=15 A • IGBT co-packed with full current, soft and low Qrr diode • Low saturation voltage VCE(sat) = 2.0 V at Tvj=175 °C • Optimized for hard

文件：2.01304 Mbytes 页数：16 Pages

Infineon

英飞凌