IKW15N120CS7

Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology

Shortcircuitrugged1200VTRENCHSTOP™IGBT7technologycopackedwithsoftandfastrecoveryEmitterControlled7diode Features •VCE=1200V •IC=15A •IGBTco-packedwithfullcurrent,softandlowQrrdiode •LowsaturationvoltageVCE(sat)=2.0VatTvj=175°C •Optimizedforhard

IKW15N120CS7

EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact)

Features •Single-channelisolatedgatedriver •Forusewith600V/650V/1200V/1700V/2300VIGBTs,SiandSiCMOSFETs •Upto6.5Atypicalpeakoutputcurrent •45nspropagationdelaywith7nspart-to-partmatching(skew) •35Vabsolutemaximumoutputsupplyvoltage •Highcommon-mode

IKW15N120CS7XKSA1

包装：管件 封装/外壳：TO-247-3 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：INDUSTRY 14 PG-TO247-3