丝印：K15MCS7；Package：PG-TO247-3；Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology

Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology copacked with soft and fast recovery Emitter Controlled 7 diode Features • VCE=1200 V • IC=15 A • IGBT co-packed with full current, soft and low Qrr diode • Low saturation voltage VCE(sat) = 2.0 V at Tvj=175 °C • Optimized for hard

文件：2.01304 Mbytes 页数：16 Pages

INFINEON

英飞凌

EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact)

Features • Single-channel isolated gate driver • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 45 ns propagation delay with 7 ns part-to-part matching (skew) • 35 V absolute maximum output supply voltage • High common-mode

文件：4.24411 Mbytes 页数：34 Pages

INFINEON

英飞凌

1200 V、15 A IGBT7 S7，带反并联二极管，采用 TO-247 封装

\n优势:\n• Lowest losses on IGBT, high system efficiency for higher power output\n• Higher power density without heatsink redesign\n• Fast and easy replacement of predecessor T2 portfolio\n• High device reliabiity in harsh operating condition\n• Ease to design to meet EMI requirement;

Infineon

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：INDUSTRY 14 PG-TO247-3

INFINEON

英飞凌