型号：DTA115G；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 页数：9 Pages

ROHM

罗姆

型号：DTA115GKA；Package：SOT-346；Digital transistors (built-in resistor)

Features 1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 2) Only the on / off conditions need to be set for operation, making device design easy.

文件：47.42 Kbytes 页数：3 Pages

ROHM

罗姆

型号：DTA115GUA；Package：SOT-323；Digital transistors (built-in resistor)

Features 1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 2) Only the on / off conditions need to be set for operation, making device design easy.

文件：47.42 Kbytes 页数：3 Pages

ROHM

罗姆

型号：MBRS190；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：477.13 Kbytes 页数：3 Pages

SY

顺烨电子

型号：SS1090FL；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：542.86 Kbytes 页数：3 Pages

SY

顺烨电子

型号：DTA115GUA；Package：SOT-323；PNP -100mA -50V Digital Transistor

文件：942.94 Kbytes 页数：7 Pages

ROHM

罗姆

型号：TK190A60Z1；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.158 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.48 mA)

文件：507.7 Kbytes 页数：9 Pages

TOSHIBA

东芝

型号：TK190A65Z；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.158 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA)

文件：469.94 Kbytes 页数：10 Pages

TOSHIBA

东芝

型号：TK190E60Z1；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.158 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.48 mA)

文件：511.85 Kbytes 页数：9 Pages

TOSHIBA

东芝

型号：TK190E65Z；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.158 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA)

文件：467.5 Kbytes 页数：10 Pages

TOSHIBA

东芝