DTA115G

Marking：K19；DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

DTA115GKA

Marking：K19；Package：SOT-346；Digital transistors (built-in resistor)

Features 1)Thebuilt-inbiasresistorsconsistofthin-filmresistors withcompleteisolationtoallowpositivebiasingofthe input,andparasiticeffectsarealmostcompletely eliminated. 2)Onlytheon/offconditionsneedtobeset foroperation,makingdevicedesigneasy.

DTA115GUA

Marking：K19；Package：SOT-323；Digital transistors (built-in resistor)

Features 1)Thebuilt-inbiasresistorsconsistofthin-filmresistors withcompleteisolationtoallowpositivebiasingofthe input,andparasiticeffectsarealmostcompletely eliminated. 2)Onlytheon/offconditionsneedtobeset foroperation,makingdevicedesigneasy.

MBRS190

Marking：K19；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadl

SS1090FL

Marking：K19；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadl

DTA115GUA

Marking：K19；Package：SOT-323；PNP -100mA -50V Digital Transistor

TK190A65Z

Marking：K190A65Z；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.158Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.61mA)

TK190E65Z

Marking：K190E65Z；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.158Ω(typ.) (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.61mA)

TK190U65Z

Marking：K190U65Z；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.149Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.61mA)

TK19A50W

Marking：K19A50W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.16Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.79mA)