丝印：K19；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：477.13 Kbytes 页数：3 Pages

SY

顺烨电子

SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

文件：536.39 Kbytes 页数：3 Pages

SY

顺烨电子

肖特基功率整流器，表面贴装，1.0 A，90 V

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectif • Small Compact Surface Mountable Package with J-Bend Leads\n• Rectangular Package for Automated Handling\n• Highly Stable Oxide Passivated Junction\n• High Blocking Voltage - 100 Volts\n• 150°C Operating Junction Temperature\n• Guardring for Stress ProtectionMechanical Characteristics:\n• Case;

ONSEMI

安森美半导体

1.0A Surface Mount Schottky Power Rectifier

Features ● Pb−Free Packages are Available ● Small Compact Surface Mountable Package with J-Bend Leads ● Rectangular Package for Automated Handling ● Highly Stable Oxide Passivated Junction ● High Blocking Voltage − 100 Volts ● 175°C Operating Junction Temperature ● Guardring for Stress Prot

文件：297.64 Kbytes 页数：2 Pages

SUNMATE

森美特

1 Amp Schottky Rectifier

● Uderwirters Laboratory Flammability Class 94V-0 ● Schottky Barrier Rectifier ● Guard Ring Protection ● 175°C Junction Temperature ● Surface mount package

文件：94.71 Kbytes 页数：2 Pages

Microsemi

美高森美

Schottky Power Rectifier

Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited

文件：46.96 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Schottky Power Rectifier

Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited

文件：132.48 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

丝印：B19；Package：SMB；Schottky Power Rectifier Surface Mount Power Package

Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or

文件：168.37 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

1 Amp Schottky Rectifier

● Uderwirters Laboratory Flammability Class 94V-0 ● Schottky Barrier Rectifier ● Guard Ring Protection ● 175°C Junction Temperature ● Surface mount package

文件：94.71 Kbytes 页数：2 Pages

Microsemi

美高森美

Low power loss,high efficiency

文件：502.79 Kbytes 页数：2 Pages

GXELECTRONICS

星合电子