丝印：K120；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.52868 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：K120；Package：SOD-123FL；SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

文件：519.25 Kbytes 页数：3 Pages

SY

顺烨电子

丝印：K120；Package：SOD123FL；Surface Mount Schottky Barrier Rectifier

文件：409.43 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：K120MCH7；Package：PG-TO247-3-PLUS-NN3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode

Features • VCE = 1200 V • IC = 120 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed with full rated current, low Qrr and soft-commutating high speed diode • Low saturation voltage VCEsat = 1.7 V at Tvj = 25°C • Optimized for high efficiency in high s

文件：1.69372 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：K120MCS7；Package：PG-TO247-3-PLUS-NN3.7；Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features • VCE = 1200 V • IC = 120 A • IGBT co-packed with full current, soft and low Qrr diode • Low saturation voltage VCEsat = 2.0 V at Tvj = 175°C • Optimized for hard switching topologies (2-L inverter, 3-L NPC T-type, ...) • Short circuit ruggedness 8 μs • Wide range of dv/dt controll

文件：1.57433 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：K120EEH7；Package：PG-TO247-3-PLUS-NN3.7；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features • VCE = 650 V • IC = 120 A • Low switching losses • Very low collector-emitter saturation voltage VCEsat • Very soft, fast recovery antiparallel diode • Smooth switching behavior • Humidity robustness • Optimized for hard switching, two- and three-level topologies • Complete prod

文件：2.17588 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：K120GCP2；Package：PG-TO247-3-PLUS-NN8.5；Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package co-packed with soft and fast recovery diode

Features • VCE = 750 V • IC = 120 A • Low saturation voltage VCEsat = 1.4 V • Low switching losses • Short circuit ruggedness 3 μs • IGBT co-packed with full current, soft and fast recovery diode • Optimized for hard switching topologies up to 10 KHz • Package backside suitable for reflow

文件：1.63441 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：K120EEH7；Package：PG-TO247-4-PLUS-NN5.1；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features • VCE = 650 V • IC = 120 A • Low switching losses • Very low collector-emitter saturation voltage VCEsat • Very soft, fast recovery antiparallel diode • Smooth switching behavior • Humidity robustness • Optimized for hard switching, two- and three-level topologies • Complete prod

文件：2.19604 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：K120J；Package：SOF2-4；Surface Mount Schottky Bridge Rectifiers

文件：957.82 Kbytes 页数：3 Pages

JUXING

广东钜兴电子

丝印：DB120；Package：DO-15；Sidac

Features Excellent capability of absorbing transient surge Quick response to surge voltage (ns Level) Glass passivated junctions High voltage lcmp ignitors

文件：3.6673 Mbytes 页数：5 Pages

UNSEMI

优恩半导体