型号：1.0SMB12A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

文件：1.26024 Mbytes 页数：7 Pages

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顺烨电子

型号：TK12A50W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA)

文件：255.85 Kbytes 页数：10 Pages

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型号：TK12A60D；Package：SC-67；Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：192.33 Kbytes 页数：6 Pages

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型号：TK12A80W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V(VDS = 10 V, ID = 0.57 mA)

文件：409.67 Kbytes 页数：10 Pages

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型号：K12A50D；Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON)= 0.45 Ω(typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.) • Low leakage current: IDSS= 10 μA (VDS= 500 V) • Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

文件：262.5 Kbytes 页数：6 Pages

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型号：K12A50D；Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.) • Low leakage current: IDSS = 10 μA (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：319.18 Kbytes 页数：6 Pages

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东芝

型号：K12A60D；Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：192.33 Kbytes 页数：6 Pages

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型号：K12A60U；Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications • Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) • High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

文件：187.12 Kbytes 页数：6 Pages

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型号：K12A60W；MOSFETs Silicon N-Channel MOS (DTMOS??

Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) Applications • Switching Voltage Regulators

文件：246.65 Kbytes 页数：10 Pages

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东芝

型号：K12A；2 x 1.2mm Auto Grade Tuning Fork

文件：283.64 Kbytes 页数：3 Pages

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