丝印：K12A80W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V(VDS = 10 V, ID = 0.57 mA)

文件：409.67 Kbytes 页数：10 Pages

TOSHIBA

东芝

iscN-Channel MOSFET Transistor

文件：288.93 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (N-ch 700V VDSS)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 11.5 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 800 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

Sensitive Gate Bi-Directional Triode Thyristor

文件：447.69 Kbytes 页数：6 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司