丝印：K12A50W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA)

文件：255.85 Kbytes 页数：10 Pages

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isc N-Channel MOSFET Transistor

文件：288.81 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (N-ch 250V VDSS 500V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 11.5 A \nPower Dissipation PD 35 W \nDrain-Source voltage VDSS 500 V ;

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isc N-Channel MOSFET Transistor

文件：288.81 Kbytes 页数：2 Pages

ISC

无锡固电

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON)= 0.45 Ω(typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.) • Low leakage current: IDSS= 10 μA (VDS= 500 V) • Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

文件：262.5 Kbytes 页数：6 Pages

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Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.) • Low leakage current: IDSS = 10 μA (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：319.18 Kbytes 页数：6 Pages

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