TK12A50W

丝印：K12A50W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.265Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.6mA)

TK12A50W

isc N-Channel MOSFET Transistor

ITK12A50W

iscN-ChannelMOSFETTransistor

K12A50D

SwitchingRegulatorApplications

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.45Ω(typ.) •Highforwardtransferadmittance:|Yfs|=6.0S(typ.) •Lowleakagecurrent:IDSS=10μA(VDS=500V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

K12A50D

FieldEffectTransistorSiliconNChannelMOSType(π-MOSⅦ)

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.45Ω(typ.) •Highforwardtransferadmittance:|Yfs|=6.0S(typ.) •Lowleakagecurrent:IDSS=10μA(VDS=500V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)