SS10200FL

Marking：K120；Package：SOD-123FL；SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Forsurfacemountedapplications Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Built-instrainrelief,idealforautomatedplacement Highforwardsurgecurrentc

TK125A60Z1

Marking：K125A60Z1；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.105Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.73mA)

TK125E60Z1

Marking：K125E60Z1；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.105Ω(typ.) (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.73mA)

TK125N60Z1

Marking：K125N60Z1；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.105Ω(typ.) (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.73mA)

TK125U60Z1

Marking：K125U60Z1；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.105Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.73mA)

TK12A50W

Marking：K12A50W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.265Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.6mA)

TK12A60D

Marking：K12A60D；Package：SC-67；Switching Regulator Applications

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.45Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=7.5S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) •Enhancement-mode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TK12A80W

Marking：K12A80W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.38Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3.0to4.0V(VDS=10V,ID=0.57mA)

TK12E80W

Marking：K12E80W；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.38Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3.0to4.0V(VDS=10V,ID=0.57mA)

DS120W

Marking：K120；Package：SOD123FL；Surface Mount Schottky Barrier Rectifier