1.0SMB12CA

Marking：K12C；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, epetitionrate(dutycycle):0.01%

DS120W

Marking：K120；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metalsiliconjunction,majoritycarrierconduction Forsurfacemountedapplications Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpolarityprotectionapplications

IKQ120N120CH7

Marking：K120MCH7；Package：PG-TO247-3-PLUS-NN3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode

Features •VCE=1200V •IC=120A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packedwithfullratedcurrent,lowQrrandsoft-commutating highspeeddiode •LowsaturationvoltageVCEsat=1.7VatTvj=25°C •Optimizedforhighefficiencyinhighs

IKQ120N120CS7

Marking：K120MCS7；Package：PG-TO247-3-PLUS-NN3.7；Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=1200V •IC=120A •IGBTco-packedwithfullcurrent,softandlowQrrdiode •LowsaturationvoltageVCEsat=2.0VatTvj=175°C •Optimizedforhardswitchingtopologies(2-Linverter,3-LNPCT-type,...) •Shortcircuitruggedness8μs •Widerangeofdv/dtcontroll

IKQ120N65EH7

Marking：K120EEH7；Package：PG-TO247-3-PLUS-NN3.7；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=650V •IC=120A •Lowswitchinglosses •Verylowcollector-emittersaturationvoltageVCEsat •Verysoft,fastrecoveryantiparalleldiode •Smoothswitchingbehavior •Humidityrobustness •Optimizedforhardswitching,two-andthree-leveltopologies •Completeprod

IKQB120N75CP2

Marking：K120GCP2；Package：PG-TO247-3-PLUS-NN8.5；Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package co-packed with soft and fast recovery diode

Features •VCE=750V •IC=120A •LowsaturationvoltageVCEsat=1.4V •Lowswitchinglosses •Shortcircuitruggedness3μs •IGBTco-packedwithfullcurrent,softandfastrecoverydiode •Optimizedforhardswitchingtopologiesupto10KHz •Packagebacksidesuitableforreflow

IKY120N65EH7

Marking：K120EEH7；Package：PG-TO247-4-PLUS-NN5.1；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=650V •IC=120A •Lowswitchinglosses •Verylowcollector-emittersaturationvoltageVCEsat •Verysoft,fastrecoveryantiparalleldiode •Smoothswitchingbehavior •Humidityrobustness •Optimizedforhardswitching,two-andthree-leveltopologies •Completeprod

K1200SA

Marking：K12S；Package：SMA；Sidac

Features Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Glasspassivatedjunctions Highvoltagelcmpignitors

K1200SB

Marking：K12S；Package：DO-214AA；Sidac

Features Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Glasspassivatedjunctions Highvoltagelcmpignitors

K1200SD1

Marking：K12S；Package：SOD-123FL；Sidac

Features Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Glasspassivatedjunctions Highvoltagelcmpignitors