N-Channel Enhancement Mode Avalanche Rated

TrenchT4™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International Standard Packages • 175°C Operating Temperature • High Current Handling Capability • Avalanche Rated • Low RDS(on) Advantages • Easy to Mount • Space Savings • High Power Density Applications •

文件：248.45 Kbytes 页数：6 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on) ≤ 4.7mΩ@VGS=10V • Fully characterized avalanche voltage and current • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converters • High Current Swi

文件：383.38 Kbytes 页数：2 Pages

ISC

无锡固电

N通道沟槽栅 Gen4 MOSFET

• 超低通态电阻RDS(on)\n• 高电流处理能力\n• 雪崩评级\n• 175°C工作温度\n• 国际标准包装;

Littelfuse

力特

isc N-Channel MOSFET Transistor

文件：295.21 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Avalanche Rated

TrenchT4™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International Standard Packages • 175°C Operating Temperature • High Current Handling Capability • Avalanche Rated • Low RDS(on) Advantages • Easy to Mount • Space Savings • High Power Density Applications •

文件：248.45 Kbytes 页数：6 Pages

IXYS

艾赛斯