isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 41A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 72mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and High Power density

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ISC

无锡固电

N-Channel Enhancement Mode

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IXYS

艾赛斯

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

Littelfuse

力特

TO-3PL

IXYS

艾赛斯

上传：深圳市卓越微芯电子有限公司

TO-264

IXYS/LITTELFUSE

上传：深圳市斌腾达科技有限公司