HiperFETTM Power MOSFETs Q3-Class

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • Low Intrinsic Gate Resistance • International Standard Packages • Low Package Inductance • Fast Intrinsic Rectifier • Low RDS(on) and QG Advantages • High Power Density • Easy to Mount • Space Savings Applica

文件：138.5 Kbytes 页数：5 Pages

IXYS

艾赛斯

N通道HiPerFET

• 每个硅片面积的Rdson较低\n• 较低的Qg和Qgd\n• 卓越的dV/dt性能\n• 高速开关\n• 快速本征整流器\n• 较低的本征栅极电阻\n• 较高的雪崩能量性能\n• 卓越的热性能;

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：338.07 Kbytes 页数：2 Pages

ISC

无锡固电

HiperFETTM Power MOSFETs Q3-Class

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • Low Intrinsic Gate Resistance • International Standard Packages • Low Package Inductance • Fast Intrinsic Rectifier • Low RDS(on) and QG Advantages • High Power Density • Easy to Mount • Space Savings Applica

文件：138.5 Kbytes 页数：5 Pages

IXYS

艾赛斯