IXFR102N30

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=36mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IXFR102N30P

PolarHT HiPerFET Power MOSFET

PolarHT™HiPerFETPowerMOSFET(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode FastIntrinsicDiodeAvalancheRated Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Intern

IXFK102N30P

PolarHTHiPerFETPowerMOSFET

PolarHT™HiPerFETPowerMOSFET N-ChannelEnhancementMode FastIntrinsicDiode AvalancheRated Features •Internationalstandardpackage •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •

IXFK102N30P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=102A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

IXFN102N30P

PolarHVHiPerFETPowerMOSFET

PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackage •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •Fastrecoverydiode •UnclampedInducti

IXTK102N30P

PolarHTPowerMOSFET

PolarHT™PowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXTK102N30P

IscN-ChannelMOSFETTransistor