isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.32 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.1Ω(Max)@VGS= 10V APPLICATIONS · Switching

文件：397.35 Kbytes 页数：2 Pages

ISC

无锡固电

PolarHV HiPerFET Power MOSFET

PolarHV™ HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ● International Standard Packages ● Avalanche Rated ● Low Package Inductance ● Easy to Drive and to Protect Advantages ● Easy to Mount ● Space Savings ● High Power Density Applicati

文件：155.12 Kbytes 页数：5 Pages

IXYS

艾赛斯

Power MOSFET

文件：353.97 Kbytes 页数：7 Pages

IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特