HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

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艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 500mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.01 Kbytes 页数：2 Pages

ISC

无锡固电

Polar Power MOSFET HiperFET

Polar™ Power MOSFET HiperFET™ N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

文件：150.99 Kbytes 页数：5 Pages

IXYS

艾赛斯

Polar Power MOSFET HiPerFET

Polar™ Power MOSFET HiPerFET™ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • Plastic overmolded tab for electrical isolation • International standard package • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy t

文件：114.99 Kbytes 页数：5 Pages

IXYS

艾赛斯