HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：295.27 Kbytes 页数：8 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs with Schottky Diodes

HiPerFET™ Power MOSFETs with Schottky Diodes Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits

文件：99.32 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs with Schottky Diodes

HiPerFET™ Power MOSFETs with Schottky Diodes Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits

文件：99.32 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs with Schottky Diodes

HiPerFET™ Power MOSFETs with Schottky Diodes Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits

文件：99.32 Kbytes 页数：2 Pages

IXYS

艾赛斯

Boost and Buck Configurations

·Vdss: 45V - 600V, Id(25): 21A - 150A \n·Very Low Rds(on): 3.8 mOhms\n·dv/dt ruggedness. Fast reverse diode\n·low inductive current path\n·Kelvin source terminals for easy drive\n·2500 V rms Isolation with ceramic base plate;

Littelfuse

力特

Boost and Buck Configurations

·Vdss: 45V - 600V, Id(25): 21A - 150A \n·Very Low Rds(on): 3.8 mOhms\n·dv/dt ruggedness. Fast reverse diode\n·low inductive current path\n·Kelvin source terminals for easy drive\n·2500 V rms Isolation with ceramic base plate;

Littelfuse

力特

Boost and Buck Configurations

·Vdss: 45V - 600V, Id(25): 21A - 150A \n·Very Low Rds(on): 3.8 mOhms\n·dv/dt ruggedness. Fast reverse diode\n·low inductive current path\n·Kelvin source terminals for easy drive\n·2500 V rms Isolation with ceramic base plate;

Littelfuse

力特