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型号	下载订购	功能描述	制造商上传企业	LOGO
IRLL014N	文件：158.5 Kbytes Page：9 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：158.5 Kbytes 页数：9 Pages	IRF	IRF
IRLL014N	文件：165.67 Kbytes Page：9 Pages	Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：165.67 Kbytes 页数：9 Pages	IRF	IRF
IRLL014N	文件：1.03976 Mbytes Page：8 Pages	丝印：LL014N；Package：SOT-223；55V N-Channel MOSFET Benefits VDS (V) =55V ID =2.0A (VGS = 10V) RDS(ON) 文件：1.03976 Mbytes 页数：8 Pages	EVVOSEMI 翊欧	EVVOSEMI
IRLL014NPBF	文件：261.26 Kbytes Page：9 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：261.26 Kbytes 页数：9 Pages	IRF	IRF
IRLL014NTR	文件：165.67 Kbytes Page：9 Pages	Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：165.67 Kbytes 页数：9 Pages	IRF	IRF
IRLL014NTRPBF	文件：262.4 Kbytes Page：9 Pages	Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：262.4 Kbytes 页数：9 Pages	IRF	IRF
IRLL014NTRPBF-TP	文件：1.82994 Mbytes Page：5 Pages	丝印：LL014N；Package：SOT223；‘N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES 60V, 4A, Ros = B5TIQ. @Vis = 10V. Reson = 10070 @Vos = 45V. 1 High dense ce design for extremely low Rosco Rugged and reat. Lead re products acquired 507.223 package. 文件：1.82994 Mbytes 页数：5 Pages	TECHPUBLIC 台舟电子	TECHPUBLIC
IRLL014PBF	文件：959.24 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq 文件：959.24 Kbytes 页数：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRLL014TRA	文件：959.24 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq 文件：959.24 Kbytes 页数：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRLL014TRPBFA	文件：959.24 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq 文件：959.24 Kbytes 页数：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY

技术参数

OPN：
IRLL014NTRPBF
Qualification：
Non-Automotive
Package name：
SOT223
VDS max：
55 V
RDS (on) @10V max：
140 mΩ
RDS (on) @4.5V max：
280 mΩ
ID @25°C max：
2.8 A
QG typ @10V：
9.5 nC
Special Features：
Small Power
Polarity：
N
VGS(th) min：
1 V
VGS(th) max：
2 V
VGS(th)：
1.5 V
Technology：
IR MOSFET™

供应商	型号	品牌	批号	封装	库存	备注	价格
柒号芯城电子商务(深圳)有限公司	IRLL014	IR	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市昌和盛利电子有限公司	IRLL014	IR	26+	SOT-223	18657	全新原装正品,价格优势,长期供应,量大可订	询价
深圳市坤融电子科技有限公司	IRLL014	VISHAY/威世	2025+	SOT-223	5000	原装进口价格优请找坤融电子!	询价
深圳市福安瓯科技有限公司	IRLL014	IR	25+	SOT-223	3500	福安瓯为您提供真芯库存,真诚服务	询价
深圳市一线半导体有限公司	IRLL014	IR	24+	SOT-223	13700	新进库存/原装	询价
芯有半导体（深圳）有限公司	IRLL014	IOR	05/06+	SOT223	168	全新原装100真实现货供应	询价
深圳市弘为电子有限公司	IRLL014	IR	24+	原厂封装	4241	原装现货假一罚十	询价
上海鑫科润电子科技有限公司	IRLL014	IOR	0705+	SOT223-3	80	原装现货海量库存欢迎咨询	询价
深圳市壹芯创科技有限公司	IRLL014	IOR	22+	SOT223-3	2500	全新原装现货!自家库存!	询价
深圳市佳鑫美电子科技有限公司	IRLL014	IOR	25+		2987	绝对全新原装现货供应!	询价

更多IRLL014供应商更新时间2026-1-25 13:00:00

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