IRGBC20MD2-S

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=8.0A)

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShort CircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhi

IRGBC20MD2

FitRate/EquivalentDeviceHours

IRGBC20MD2

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERY(Vces=600V,@Vge=15V,Ic=8.0A)

Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,applications. Thesenewshort

IRGPC20MD2

FitRate/EquivalentDeviceHours

IRGPC20MD2

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERY(Vces=600V,@Vge=15V,Ic=8.0A)

Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,applications. Thesenewshort

TL-N20MD2

RectangularStandardProximitySensor

Applications •Easyinstallation,high-speedpulsegenerator,high-speed rotationcontrol,andmore. •Directmountedtometal(-NModels). •Awealthofmodelsidealforlimitcontrol,countingcontrol,and otherapplications(-NModels).