INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=8.0A)

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE= 15V •Generation 4 IGBT design provides tighter parameter distribution and hi

文件：420.04 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=8.0A)

Infineon

英飞凌

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 页数：35 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=8.0A)

Description Co-packaged IGBTs are a natural extension of International Rectifiers well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short

文件：418.31 Kbytes 页数：8 Pages

IRF

Rectangular Standard Proximity Sensor

Applications • Easy installation, high-speed pulse generator, high-speed rotation control, and more. • Direct mounted to metal (-N Models). • A wealth of models ideal for limit control, counting control, and other applications (-N Models).

文件：1.20374 Mbytes 页数：12 Pages

OMRON

欧姆龙