IRGBC20MD2-S中文资料IRF数据手册PDF规格书

厂商型号	IRGBC20MD2-S
功能描述	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=8.0A)
文件大小	420.04 Kbytes
页面数量	8 页
生产厂商	IRF
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-12-13 11:24:00
人工找货	IRGBC20MD2-S价格和库存，欢迎联系客服免费人工找货

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

特性 Features

•Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short

Circuit Rated to 10µs @ 125°C, VGE= 15V

•Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

previous generation

•IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

•Industry standard D2Pak package

Benefits

•Latest generation 4 IGBTs offer highest power density motor controls possible.

•HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics

reduce noise, EMI and switching losses.

•This part replaces the IRGBC20KD2-S and IRGBC20MD2-S products.

•For hints see design tip 97003.

型号：
IRGBC20MD2-S
制造商：
IRF
制造商全称：
International Rectifier
功能描述：
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=8.0A)